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High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene (1211.0458v1)

Published 2 Nov 2012 in physics.optics and cond-mat.mes-hall

Abstract: We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modulation of the cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. We also observe a controllable resonance wavelength shift close to 2 nm around a wavelength of 1570 nm and a Q factor modulation in excess of three. These observations allow cavity-enhanced measurements of the graphene complex dielectric constant under different chemical potentials, in agreement with a theoretical model of the graphene dielectric constant under gating. This graphene-based nanocavity modulation demonstrates the feasibility of high-contrast, low-power frequency-selective electro-optic nanocavity modulators in graphene-integrated silicon photonic chips.

Citations (179)

Summary

High-Contrast Electro-Optic Modulation Using Graphene-Integrated Photonic Crystal Nanocavities

The paper titled "High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene" presents a notable advancement in the field of photonic devices, leveraging the unique optical properties of graphene. This paper discusses an innovative approach to electro-optic modulation utilizing graphene's interaction with a photonic crystal (PPC) nanocavity. The research illustrates how graphene's integration into these systems enables significant modulation effects via electrical gating, achieving modulation depths exceeding 10 dB with minimal voltage swing.

Key aspects of the research include the deployment of graphene, a material renowned for its remarkable transport and optical characteristics, into a high-Q factor air-slot nanocavity. This configuration enhances light-matter interaction by maximizing the overlap between the optical field and the graphene sheet. The modulation is executed by altering the Fermi level of graphene up to 0.8 eV through electrical gating, which significantly changes its complex dielectric constant. The modulation scheme is effective enough to yield a resonant wavelength shift of approximately 2 nm around a wavelength of 1570 nm, alongside a profound modulation of the cavity's Q factor by more than threefold.

Methodologically, the investigators employ a planar PPC nanocavity coupled with graphene, optimizing the interaction spontaneously compared to previous designs involving three-hole defect cavities or high-index material cavities. The experiment demonstrated electro-optical modulation through a graphene field effect transistor (FET) setup, controlled with a solid electrolyte. The modulation mechanism involved precise tuning of graphene's Fermi energy, which inhibits interband transitions under particular conditions thereby reducing graphene's absorption and altering the resonant properties of the nanocavity.

Experimental results highlight the substantial impact of graphene transfer on nanocavity characteristics. The Q factors for distinct resonant modes decreased significantly post graphene attachment, attributable to energy decay due to absorption. Nonetheless, the configuration with incorporated graphene led to drastic reductions in reflected intensity due to strong coupling, demonstrating the efficacy of the modulation.

Furthermore, the research exhibits the ability of the integrated system to perform precision spectroscopy of graphene's dielectric properties under various chemical doping conditions. The measured complex dielectric constant aligns well with theoretical models, indicating residual absorption even when graphene’s Fermi level is elevated beyond transparency conditions for infrared photons.

From a broader perspective, this research underscores the potential applications of graphene in optoelectronic devices, specifically for compact, high-precision, low-power modulators in silicon photonic chips. Future directions could explore enhancing modulation into higher frequency regimes, such as gigahertz, by integrating dual graphene layers or employing advanced back-gating techniques. Such developments could markedly reduce power consumption due to graphene's high mobility and low capacitance characteristics.

Overall, this paper contributes substantial experimental evidence supporting graphene’s utility in electro-optic modulation applications, paving the way for advancements in silicon-integrated photonic devices. Continued exploration in this domain promises to expand upon these findings, potentially leading to novel applications and improved performance of optoelectronic components.