Ab-initio study of the bandgap engineering of Al(1-x)Ga(x)N for optoelectronic applications (1011.1573v1)

Abstract: A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga concentration. It is found that the bandgap decreases with the increase of Ga in Al(1-x)Ga(x)N. A maximum value of 5.5 eV is determined for the bandgap of pure AlN which reaches to minimum value of 3.0 eV when Al is completely replaced by Ga. The static index of refraction and dielectric constant decreases with the increase in bandgap of the material, assigning a high index of refraction to pure GaN when compared to pure AlN. The refractive index drops below 1 for photon energies larger than 14 eV results group velocity of the incident radiation higher than the vacuum velocity of light. This astonishing result shows that at higher energies the optical properties of the material shifts from linear to non-linear. Furthermore, frequency dependent reflectivity and absorption coefficients show that peak value of the absorption coefficient and reflectivity shifts towards lower energy in the UV spectrum with the increase in Ga concentration. This comprehensive theoretical study of the optoelectronic properties of the alloys is presented for the first time which predicts that the material can be effectively used in the optical devices working in the visible and UV spectrum.